Yichen Jia

Yichen Jia's picture
PhD Candidate
EE: Electrical Engineering
Year: 
5
Address: 
PO BOX 208284, Dept. of Applied Physics, New Haven, CT 06520
Office Location: 
Becton Center 301
Bio: 

B.S. in Physics, Nanjing University

Publications: 
  1. B. Liu, M. Köpf, A. Abbas, X. Wang, Q. Guo, Y. Jia, F. Xia, R. Weihrich, F. Bachhuber, F. Pielnhofer, H. Wang, R. Dhall, S. Cronin, M. Ge, X. Fang, T. Nilges, and C. Zhou, “Black arsenic-phosphorus: layered anisotropic infrared semiconductors with highly tunable compositions and properties”, Advanced Materials 27, 4423-4429 (2015).
  2. Y. Jia, H. Zhao, Q. Guo, X. Wang, H. Wang, and F. Xia, “Tunable plasmon-phonon polaritons in layered graphene-hexagonal boron nitride heterostructures”, ACS Photonics 2, 907-912 (2015).
  3. X. Wang, A. M. Jones, K. L. Seyler, V. Tran, Y. Jia, H. Zhao, H. Wang, L. Yang, X. Xu, and F. Xia, “Highly anisotropic and robust excitons in monolayer black phosphorus”, Nature Nanotechnology 10, 517-521 (2015).
  4. Y. Liu, A. Chadha, D. Zhao, J. R. Piper, Y. Jia, Y. Shuai, L. Menon, H. Yang, Z. Ma, S. Fan, F. Xia, and W. Zhou, “Approaching total absorption at near infrared in a large area monolayer graphene by critical coupling”, Applied Physics Letters 105, 181105 (2014).
  5. F. Xia, H. Wang, and Y. Jia, “Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics”, Nature Communications 5, 4458 (2014).